We engineer low-CTE, high-purity epoxy systems that bond advanced technical ceramics without stress fractures under severe thermal shock or high-voltage service.
Not all adhesives for ceramic bonding applications demand the same chemistry. Kohesi Bond’s ceramic epoxy adhesive systems are formulated substrate-first, matched to the purity, porosity, and thermal profile of each advanced ceramic.
When bond line temperature exceeds the adhesive’s glass transition temperature, load-bearing capacity drops sharply. Our high-temperature ceramic adhesive systems are formulated to sustain high crosslink density and structural adhesion at continuous service temperatures up to 250°C (with intermittent excursion capabilities up to 300°C).
Our applications engineers match ceramic bonding formulations to your substrate, thermal profile, and electrical requirements.
| Substrate Combination | Recommended System | Lap Shear Strength | Max Service Temp | Key Parameter |
| Ceramic to Metal | High-modulus two-part epoxy | Above 15 MPa | Up to 250°C | CTE-matched, low shrinkage |
| Ceramic to Glass | Optical-grade low-shrinkage epoxy | Above 10 MPa | Up to 200°C | Void content below 2% |
| Ceramic to Composite | Toughened structural epoxy | Above 12 MPa | Up to 180°C | Elongation above 2% |
| Ceramic to Ceramic | High-purity rigid epoxy | Above 12 MPa | Up to 300°C | Flexural modulus above 6 GPa |
| Ceramic to PCB Substrate | Electrically insulating epoxy | Above 8 MPa | Up to 150°C | Volume resistivity above 10¹⁵ Ω·cm |
High-voltage insulators, bushing assemblies, and dielectric spacers require a ceramic epoxy adhesive that combines structural load capacity with electrical isolation.
Our formulations deliver volume resistivity above 10¹⁵ Ω·cm and dielectric strength above 18 kV/mm, maintaining both properties after thermal ageing at 200°C. Bond line void content is controlled below 2% to eliminate partial discharge initiation sites within the adhesive layer.
Semiconductor etch chamber components, wafer handling tools, and process sensors operate under combined vacuum, plasma exposure, and rapid thermal cycling.
Our high-temperature ceramic epoxy systems for semiconductor applications offer:
For vacuum-critical installations, formulations with TML below 1.0% and CVCM below 0.1% per ASTM E-595 are available. Explore Kohesi Bond's adhesive selection for space applications for outgassing-qualified formulation guidance.
Ceramic substrates in power electronics, RF components, and high-frequency assemblies function simultaneously as structural elements and thermal or electrical barriers.
Our heat-resistant ceramic adhesive systems for thermal management applications combine thermal conductivity values of 1.0 to 3.0 W/m·K with electrical isolation above 10¹⁴ Ω·cm, bonding alumina and aluminium nitride substrates to metal heat spreaders without introducing a thermally resistive void layer at the interface.
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Our ceramic epoxy adhesive systems for high-vacuum and high-voltage service are qualified on four metrics: void content below 2% to eliminate partial discharge sites, volume resistivity above 10¹⁵ Ω·cm, TML below 1.0% and CVCM below 0.1% per ASTM E-595 for vacuum cleanliness, and lap shear retention above 80% after thermal ageing. Dry strength data alone does not qualify a system for these environments.
Our high-temperature ceramic adhesive formulations for alumina are tested across 50-cycle thermal shock profiles from -55°C to +250°C with no cohesive failure or delamination. CTE matching to alumina’s 6 to 8 ppm/°C minimises the interfacial stress generated during each thermal transition, which is the primary driver of bond line cracking in rapid-cycle applications.
Our heat-resistant ceramic epoxy systems for thermal management applications achieve thermal conductivity of 1.0 to 3.0 W/m.K through controlled filler loading while maintaining volume resistivity above 10¹⁴ Ω·cm. Filler type and particle size distribution are selected to maximise thermal conductivity without creating conductive percolation pathways through the cured matrix.